MUMBAI, India, Jan. 2 -- Intellectual Property India has published a patent application (202541122983 A) filed by Vellore Institute Of Technology, Vellore, Tamil Nadu, on Dec. 5, 2025, for 'high gain siw based mimo antenna for x-band and ku-band applications.'
Inventor(s) include Dr. Avinash Chandra; and Mr. Ashutosh Agrawal.
The application for the patent was published on Jan. 2, under issue no. 01/2026.
According to the abstract released by the Intellectual Property India: "The present disclosure provides a substrate integrated waveguide based multiple-input multiple-output antenna system. The antenna system includes a dielectric substrate having top and bottom surfaces with relative permittivity between 2.0-3.0 and thickness between 0.5-1.0 mm, first and second metallic layers forming a ground plane, and metallic vias arranged in parallel rows forming substrate integrated waveguide cavity sidewalls. The system includes radiating slots etched in the first metallic layer with horizontal slots in an upper portion and vertical slots on lateral sides, a circular aperture positioned centrally in a lower portion with diameter between 5-8 mm, triangular slot elements extending diagonally from the circular aperture toward lower corners, and first and second feed lines connected to ports on opposite sides. The antenna system operates in dual-band mode with first resonant frequency in X-band between 8-12 GHz and second resonant frequency in Ku-band between 12-18 GHz."
Disclaimer: Curated by HT Syndication.
