MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541062434 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on June 30, 2025, for 'gallium nitride transistors and power amplifiers for ultra-high and very high frequency radios.'
Inventor(s) include Bandla Mousami; Terirama Thingujam; Richika Arya; Nithin; Hareesh Chandrasekar; and Digbijoy N Nath.
The application for the patent was published on Feb. 13, under issue no. 07/2026.
According to the abstract released by the Intellectual Property India: "The invention relates to a gallium nitride (GaN)-based power amplifier is disclosed for low-power radio frequency (RF) applications in the very-high frequency (VHF) and ultra-high frequency (UHF) bands, operating at 136-527 MHz. The amplifier includes a GaN transistor formed on a silicon carbide (SiC) substrate with a gate width of 2.4 to 4 mm and a 28 V drain bias, along with input and output matching networks, a stability network, and DC bias paths. It delivers a continuous wave (CW) output power of at least 5 W with a power-added efficiency (PAE) of 70% or greater, with the transistor supporting a saturated output power of 12 W or more. The amplifier, implemented in a 3 cm 1.7 cm form factor, is optimized for handheld police and military radios, offering reduced heat dissipation and extended battery life compared to silicon-based amplifiers."
Disclaimer: Curated by HT Syndication.
