MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541032615 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on April 2, 2025, for 'enhancement-mode gallium nitride (gan) transistor on silicon carbide (sic) with a thin buffer.'
Inventor(s) include Sandeep Kumar; Richika Arya; Nithin; Hareesh Chandrasekar; Digbijoynath; and Terirama Thingujam.
The application for the patent was published on Feb. 13, under issue no. 07/2026.
According to the abstract released by the Intellectual Property India: "The present invention discloses an enhancement-mode GaN High Electron Mobility Transistor (HEMT) on a silicon carbide (SiC) substrate with an ultra-thin buffer. By utilizing a SiC substrate, the proposed device achieves superior structural quality, improved heat dissipation, and enhanced reliability. The inventive step lies in the integration of a p-GaN cap on a GaN-on-SiC stack with an ultra-thin buffer, enabling high performance, enhancement mode operation suitable for power conversion applications. The stack comprises an AlN nucleation layer, a GaN channel (100-500 nm), a barrier layer (5-35 nm), a p-doped GaN or AlGaN layer (60-120 nm), and an optional gate dielectric (3-30 nm). This design ensures improved heat dissipation and long-term reliability, making it ideal for EV chargers, power converters, RF amplifiers, and telecommunications infrastructure, offering higher efficiency, scalability, and superior thermal stability for next-generation power electronics."
Disclaimer: Curated by HT Syndication.
