Intellectual Property India Publishes Patent Application for 'Composite Structure Comprising A Monocrystalline Thin Film On A Polycrystalline Silicon Carbide Support Substrate, And Associated Production Method' Filed by Soitec

MUMBAI, India, Nov. 14 -- Intellectual Property India has published a patent application (202547080903 A) filed by Soitec, Bernin, France, on Aug. 26, for 'composite structure comprising a monocrystalline thin film on a polycrystalline silicon carbide support substrate, and associated production method.'

Inventor(s) include Biard, Hugo; Potier, Alexandre; Ferrato, Marc; and Bommier, Christophe.

The application for the patent was published on Nov. 14, under issue no. 46/2025.

According to the abstract released by the Intellectual Property India: "The invention relates to a composite structure for producing microelectronic components, comprising a monocrystalline thin film placed on a polycrystalline silicon carbide support substrate, said support substrate having a preferential crystal orientation on each of its faces, according to which: - a texture coefficient C422 is less than 40%, and - the sum of texture coefficients C220+C200+C400 is greater than 50%, preferably greater than 80%. The invention also relates to a method for producing such a composite structure."

The patent application was internationally filed on Feb. 19, 2024, under International application No.PCT/EP2024/054102.

Disclaimer: Curated by HT Syndication.