MUMBAI, India, June 13 -- Intellectual Property India has published a patent application (202311083822 A) filed by Amity University, Noida, Uttar Pradesh, on Dec. 8, 2023, for 'chemical induced process for nano finishing of silicon wafer surface.'
Inventor(s) include Kheelraj Pandey; Ashwani Sharma; and Anil Kumar.
The application for the patent was published on June 13, under issue no. 24/2025.
According to the abstract released by the Intellectual Property India: "The present invention discloses Chemical induced process for Nano finishing of Silicon wafer surface and other such materials using single pole magnetic abrasive finishing. In the present invention, which identifies and fine-tunes three critical parameters to enhance the efficiency and quality of the polishing process. Firstly, the polishing speed was determined to be most effective between 500 and 1500 rpm. Speeds below 500 rpm were inadequate in removing surface irregularities, resulting in high surface roughness, while speeds above 1500 rpm led to FMAB damage. Secondly, the working gap between the FMAB and the silicon wafer was maintained within 1.5 to 5.5 mm, a crucial range where the magnetic flux density facilitates effective polishing. Lastly, the workpiece feed-rate was optimized between 1.5 and 5.5 mm/sec. Rates below this range caused excessive erosion and scratches due to prolonged contact, whereas rates above it decreased the material removal rate and compromised surface finish. These optimized parameters collectively ensure an improved polishing process for silicon wafers."
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