Intellectual Property India Publishes Patent Application for 'Bi-Layered Dense-Porous Burr Hole Defect Implant And Method Of Fabrication Thereof' Filed by Indian Institute Of Technology

MUMBAI, India, Jan. 9 -- Intellectual Property India has published a patent application (202431099585 A) filed by Indian Institute Of Technology, Kharagpur, West Bengal, on Dec. 16, 2024, for 'bi-layered dense-porous burr hole defect implant and method of fabrication thereof.'

Inventor(s) include Vaidya, Pravin Vasudeo; Seesala, Dr. Venkata Sundeep; Bagde, Dr. Ashutosh; Iratwar, Dr. Sandeep; Zahiruddin, Dr. Quazi Syed; Fulzele, Dr. Punit; and Dhara, Dr. Santanu.

The application for the patent was published on Jan. 9, under issue no. 02/2026.

According to the abstract released by the Intellectual Property India: "A bi-layered dense-porous burr hole defect implant fabricated using a slurry-based technique is disclosed. The implant comprises a dense layer formed by slurry casting of Ti6Al4V powder (D50~1-80 m) mixed with 1-10 wt% resin binder and solvent selected from ethanol, isopropanol, butanol, acetone, hexanol, water, kerosene, or mixtures thereof, at a Ti6Al4V concentration of 1-20 (vol/wt)% and shear rate of 0.01-40 s?. A porous layer, prepared by slurry infiltration of a fugitive foam template having 10-100 pores per inch (PPI) at 0.1-20 s?, is integrally joined to the dense layer in wet condition to ensure firm interfacial bonding, forming a monolithic dense-porous assembly after sintering. The implant undergoes hydrothermal treatment in an STTP:Ca(OH)2 solution (0.2-2 wt/wt) at 120-250 C for 0.5-5 h, followed by annealing at 150-250 C to generate a hydroxyapatite nanospike/nanorod surface, enabling enhanced osteointegration and antibacterial functionality for cranial defect repair."

Disclaimer: Curated by HT Syndication.