MUMBAI, India, Oct. 11 -- Intellectual Property India has published a patent application (202517077720 A) filed by International Business Machines Corporation, Armonk, U.S.A., on Aug. 14, for 'backside power islands for backside power applications.'
Inventor(s) include Xie, Ruilong; Penny, Christopher; Choi, Kisik; Motoyama, Koichi; Lanzillo, Nicholas, Anthony; and Yang, Chih-Chao.
The application for the patent was published on Oct. 10, under issue no. 41/2025.
According to the abstract released by the Intellectual Property India: "A semiconductor structure is provided that includes a plurality of backside power islands, rather than backside power rails. The backside power islands are present in a first device track and a second device track. Each backside power island located in the first device track and the second device track are isolated by a first cut region, and the backside power islands that are located in the first device track are separated from the backside power islands located in the second device track by a second cut region. The second cut region is oriented perpendicular to the first cut region."
The patent application was internationally filed on Mar. 06, 2024, under International application No.PCT/EP2024/055819.
Disclaimer: Curated by HT Syndication.
