MUMBAI, India, July 11 -- Intellectual Property India has published a patent application (202521049485 A) filed by Indian Institute Of Technology, Bhilai, Chhattisgarh, on May 22, for 'a system and method for generating lateral strain fields and bandgap modulation in semiconductor nanomembrane.'
Inventor(s) include Anjali Chaudhary; Soumya Tiwari; Tikendra Kumar; and Amit Rana.
The application for the patent was published on July 11, under issue no. 28/2025.
According to the abstract released by the Intellectual Property India: "The present invention relates to a system and method for generating lateral strain fields and bandgap modulation in a thickness modulated semiconductor nanomembrane comprise at least one pressure cell (101), at least one gas supply module (102), at least one spectrometer (103), at least one microscope (104) and at least one optical lithography equipment (105). The pressure (101) cell is configured to apply a controlled gas pressure of a back side of a flexible substrate, gas supply module (102) is configured to provide the gas to the pressure cell (101) for inflating the flexible substrate, spectrometer (103) is configured to provide in-situ measurement of strain by detecting a plurality of shifts in Raman spectrum of the semiconductor nanomembrane, microscope (104) is configured to measure a plurality of thickness variations between a thick and a thin regions of the semiconductor nanomembrane, and optical lithography equipment (105) is for patterning the semiconductor nanomembrane with regions of different thickness."
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