MUMBAI, India, May 1 -- Intellectual Property India has published a patent application (202641048746 A) filed by Indian Institute Of Science, Bangalore, Karnataka, on April 16, for 'a negative differential resistance (ndr) device and a method of manufacturing thereof.'
Inventor(s) include Chandan Kumar; Shantanu Majumder; Ganesha Krishna V S; and Sushil Kumar Sahu.
The application for the patent was published on May 1, under issue no. 18/2026.
According to the abstract released by the Intellectual Property India: "The present disclosure provides a negative differential resistance (NDR) device 100 and a method 900 of manufacturing thereof. The method 900 of manufacturing the NDR device 100 comprises forming a substrate 102, disposing a pair of spaced conductive electrodes 104 on the substrate 102 forming a channel for defining a lateral conduction path and disposing an insulating layer 108 on an upper surface of the channel. The channel includes a ferroelectric semiconductor 106. The NDR device 100, thus manufactured, comprises a substrate 102, a pair of spaced conductive electrodes 104 disposed on the substrate 102 forming a channel for defining a lateral conduction path and an insulating layer 108 disposed on an upper surface of the channel. Further, the NDR device 100 exhibits negative differential resistance and one or more characteristics of the NDR is controlled based on a ferroelectric polarization achieved during ferroelectric poling operation and an applied bias voltage."
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