MUMBAI, India, Sept. 14 -- Intellectual Property India has published a patent application (202621074904 A) filed by D. Y. Patil Education Societydeemed To Be University, Kasaba Bawada, Kolhapur on June 17, 2026, for "a Method For The Synthesis Of Cerium Doped Molybdenum Disulfide (ce-Doped Mos2) Thin Film On Solid Substrate For Electrocatalytic Hydrogen Evolution Reaction (her) Thereof'.
Inventors include Dr. Pravin Prakash Pawar; Ms. Gouri Mohan Khot; Mr. Vinay Avinash Nimat; Prof. Chandrakant Dnyandev Lokhande; and Prof. Pramod Shankararao Patil.
The application for the patent was published on September 11, 2026, under issue no. 37/2026.
Abstract: The present invention claims a hydrothermal method for synthesis of cerium doped molybdenum disulfide (Ce-doped MoS2) thin film on conducting stainless steel substrate. The deposition of Ce-doped MoS2 was carried out using aqueous precursor solution with various concentration of precursors and at different reaction temperature. The time of deposition varied from 20 to 26 h. The XRD analysis confirms the formation of hexagonal M0S2 corresponding to JCPDS card no. 37-1492. The diffraction peaks shift toward lower 20 values, indicating successful incorporation of Ce into the M0S2 lattice. SEM studies reveal microsphere like morphology with an average diameter of 6.38 µm. The Ce-doped MoS2 thin film electrode exhibits an overpotential of 132 mV at 10 mA cm-2, demonstrating excellent electrocatalytic activity toward HER.
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