Intellectual Property India Publishes Patent Application for 'A Method For The Inclusion Of Boron, Sulphur, Phosphorus, And Iodine Into Nitrogen-Enriched Nanoporous Polytriazine Frameworks' Filed by Indian Institute Of Technology Roorkee; and Enrgenv Smart Chemicals And Materials Pvt. Ltd.

MUMBAI, India, Jan. 23 -- Intellectual Property India has published a patent application (202511121386 A) filed by Indian Institute Of Technology Roorkee; and Enrgenv Smart Chemicals And Materials Pvt. Ltd., Roorkee, Uttarakhand, on Dec. 3, 2025, for 'a method for the inclusion of boron, sulphur, phosphorus, and iodine into nitrogen-enriched nanoporous polytriazine frameworks.'

Inventor(s) include Ms. Tanya Gupta; and Prof. Paritosh Mohanty.

The application for the patent was published on Jan. 23, under issue no. 04/2026.

According to the abstract released by the Intellectual Property India: "The present invention relates to a method for incorporating heteroatoms, specifically boron (B), sulphur (S), phosphorus (P), and iodine (I), into nitrogen-enriched nanoporous polytriazine frameworks (NENPs) to form heteroatom-engineered materials designated as X-NENPs, where X = B or S or P or I. The method comprises reacting melamine and cyanuric chloride in equal molar ratios with 0.1-1.5 moles of a selected heteroatom precursor in a polar organic solvent, followed by either thermochemical heating at 100-200 C for 10-30 h or microwave-assisted treatment at 100-200 C for 10-45 min at 200-600 W. Unlike NENP, X-NENPs exhibit a stacked layered structure due to structural ordering after inclusion of heteroatoms in the NENP framework. The polytriazine frameworks are enriched with as high as 55 wt% of heteroatoms and have high specific surface areas up to 600 m2 g-1, with pore hierarchy."

Disclaimer: Curated by HT Syndication.