MUMBAI, India, Sept. 26 -- Intellectual Property India has published a patent application (202518083990 A) filed by Seoul Viosys Co. Ltd., Gyeonggi-do, Republic of Korea, on Sept. 4, for 'a light emitting diode.'
Inventor(s) include Lee, Joon Hee.
The application for the patent was published on Sept. 26, under issue no. 39/2025.
According to the abstract released by the Intellectual Property India: "A light emitting diode comprising: a support substrate (51); a first conductivity type semiconductor layer (25); an upper insulation layer (53); a mesa comprising an active layer (27) and a second conductivity type semiconductor layer (29) and including a plurality of through-holes (32) exposing the first conductivity type semiconductor layer (25); a first electrode (39); a second electrode (34); an upper electrode pad (55); a first insulation layer (31); and a second insulation layer (37), wherein the plurality of through-holes (32) are surrounded by the active layer (27) and the second conductivity type semiconductor layer (29) and are disposed within a region surrounded by edges of the mesa; wherein the second electrode (34) includes a protective metal layer (35) extending outside the mesa and a reflection layer (33) disposed between the protective metal layer (35) and the second conductivity type semiconductor layer (29); and wherein an elevation of a plane in which the upper electrode pad (55) adjoin the protective metal layer (35) is placed between a lower surface of the first conductivity type semiconductor layer (25) and the reflection layer (33)."
The patent application was internationally filed on Dec. 06, 2019, under International application No.PCT/KR2019/017222.
Disclaimer: Curated by HT Syndication.
