MUMBAI, India, May 1 -- Intellectual Property India has published a patent application (202641047978 A) filed by V R Lenin; P. Murugapandiyan; Rejeti Rohith Sarma; Gurla Deekshitha; Lingala Sai; and Shaik Sirajuddin, TIruchengode, Tamil Nadu, on April 15, for 'a lead-free chalcogenide perovskite solar cell.'
Inventor(s) include P. Murugapandiyan; Rejeti Rohith Sarma; Gurla Deekshitha; Lingala Sai; Shaik Sirajuddin; and Dr. Lenin V R.
The application for the patent was published on May 1, under issue no. 18/2026.
According to the abstract released by the Intellectual Property India: "The new idea is a chalcogenide perovskite solar cell that is very efficient and does not use any lead. The device has an n-i-p structure. The front electrode is FTO, the Electron transport layer is ZnSe:Al, the absorber is EuHfS3, the Hole transport layer is CBTS, and the back contact is Gold. The cell achieves a power conversion efficiency of up to 32.8% through meticulous numerical optimisation with SCAPS-1D under standard AM1.5G conditions. The design has the best band alignment, the best way to get charge carriers out, the highest short-circuit current density, and the best way to handle defects. This offers a practical and environmentally friendly path to make next-generation thin-film solar cells by removing the poisonous lead and making solar cells to work well."
Disclaimer: Curated by HT Syndication.
