MUMBAI, India, Feb. 6 -- Intellectual Property India has published a patent application (202511132968 A) filed by Romana Yousuf; Shaiqa Nasreen; and Jawaaz Ahmad, Anantnag, Jammu & Kashmir, on Dec. 29, 2025, for 'a dual-passivation gradient interface layer for suppression of interfacial trap states in perovskite photovoltaic devices.'
Inventor(s) include Romana Yousuf; and Shaiqa Nasreen.
The application for the patent was published on Feb. 6, under issue no. 06/2026.
According to the abstract released by the Intellectual Property India: "The present invention relates to a perovskite photovoltaic device comprising a dual-passivation gradient interface layer disposed between a perovskite absorber layer and an adjacent charge-transport layer. The interface layer includes a controlled spatial gradient of ionic passivation agents and molecular passivation agents, wherein an ionic-rich region is positioned proximal to the perovskite absorber layer for suppression of shallow trap states, and a molecular-rich region is positioned toward the charge-transport layer for suppression of deep trap states. The graded architecture establishes a continuous chemical and energetic transition across the interface, thereby reducing interfacial recombination and ion migration while improving charge carrier extraction and operational stability. The interface layer is compatible with solution-processed and vapor-deposited fabrication techniques and can be integrated into single-junction perovskite solar cells, tandem photovoltaic devices, and hybrid photovoltaic arc."
Disclaimer: Curated by HT Syndication.
