MUMBAI, India, Nov. 21 -- Intellectual Property India has published a patent application (202511077824 A) filed by National Institute Of Technology, Kurukshetra, Haryana, on Aug. 14, for 'a dielectric modulated device.'
Inventor(s) include Nandi, Ashutosh; Verma, Manish; Kindal, Rashmi Ranjan; Verma, Vivek Kumar; and Mondal, Riju.
The application for the patent was published on Nov. 21, under issue no. 47/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure relates to a dielectric modulated device (200) having a substrate (201). A nucleation layer (202) is adapted on the substrate (201). A buffer layer (203) adapted on the nucleation layer (202). An un-intentionally doped (UID) channel layer (204) adapted on the buffer layer (203). A barrier layer (205) adapted on the UID channel layer (204). A cap layer (206) adapted on the barrier layer (205). A source electrode (207) and a drain electrode (208) adapted on the cap layer (206). A pair of dielectric modulated dual cavity regions (209a, 209b) on the cap layer (206). A triple gate terminal electrode (211) is in contact with the pair of dielectric modulated dual cavity regions (209a and 209b) and the gate dielectric (210) from a top side. The dielectric modulated device (200) disclosed herein is used in portable battery-operated on-site bio-sensing gazettes for longer time, under harsh environmental condition."
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