MUMBAI, India, Oct. 11 -- Intellectual Property India has published a patent application (202441028436 A) filed by M. S. Ramaiah University Of Applied Sciences, Bengaluru, Karnataka, on April 6, 2024, for 'a broadband emitting inorganic nanophosphor for full-spectrumphosphor-converted white light-emitting diodes application.'
Inventor(s) include G. P. Darshan; Akshay Arjun; and H B Premakumar.
The application for the patent was published on Oct. 10, under issue no. 41/2025.
According to the abstract released by the Intellectual Property India: "A Broadband Emitting Inorganic Nanophosphor for Full-Spectrum Phosphor-Converted White Light-Emitting Diodes Application A Double Perovskite Structured Nano Phosphorous (5 mol %) comprising: barium nitrate [Ba (NO3)2; 99.95 %], Zinc nitrate hexahydrate [Zn (NO3)2 6H2O; 99 %], Tungsten (VI) oxide [WO3; 99.995 %] and Erbium (III) nitrate pentahydrate [Er (NO3)3 5H2O; 99.9 %] and C2H6N4O2 (ODH). This Nano Phosphorous is synthesized using solution combustion method which is pure without any impurities and has high crystallinity with average crystallite size of 19 nm. The emission spectrum of the nano phosphorous enclosed a broadband spanning from 390 to 790 nm centered at 568 nm (yellow region). The internal photoluminescence quantum yield of the nanophosphor under 376 nm excitation is 84.08 % and it has correlated color temperature value of 4540 K and color rendering index of 78."
Disclaimer: Curated by HT Syndication.
